View IXTN21N100_65740.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

High Voltage MegaMOSTMFETs
IXTK 21N100 IXTN 21N100
VDSS = 1000 V = 21 A ID25 RDS(on) = 0.55
N-Channel, Enhancement Mode
TO-264 AA (IXTK) Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 300 0.9/6 10 Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C, Chip capability TC = 25C, pulse width limited by TJM TC = 25C Maximum Ratings IXTK IXTN 1000 1000 20 30 21 84 500 1000 1000 20 30 21 84 520 150 -55 ... +150 2500 3000 V V V V A A W C C C C V~ V~
S S D G S G D S
D (TAB)
miniBLOC, SOT-227 B E153432
D G
S
-55 ... +150
G = Gate S = Source
D = Drain TAB = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Features International standard packages JEDEC TO-264, epoxy meet UL 94 V-0 flammability classification miniBLOC, (ISOTOP-compatible) with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance
l l l l l l l l l l l l l l l
Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2 4.5 200 TJ = 25C TJ = 125C 500 2 0.55 V V nA A mA DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls
VDSS VGH(th) IGSS IDSS R DS(on)
VGS = 0 V, ID = 6 mA VDS = VGS, ID = 500 A VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V
Advantages Easy to mount Space savings High power density
92808I(5/97)
VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
(c) 2000 IXYS All rights reserved
1-4
IXTK 21N100 IXTN 21N100
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 24 8400 VGS = 0 V, VDS = 25 V, f = 1 MHz 630 110 30 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External), 50 100 40 250 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 60 100 TO-264 AA TO-264 AA miniBLOC, SOT-227 B miniBLOC, SOT-227 B 0.05 0.15 0.24 0.25 S pF pF pF ns ns ns
Dim.
TO-264 AA Outline
gfs C iss C oss C rss t d(on) tr td(off) tf Q g(on) Q gs Q gd R thJC R thCK R thJC R thCK
VDS = 10 V; ID = 0.5 * ID25, pulse test
ns nC nC nC K/W K/W K/W K/W
A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83
Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
Source-Drain Diode Symbol IS ISM VSD t rr IRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 21 84 1.5 A A V
miniBLOC, SOT-227 B
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V 1000 20
ns A
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXTK 21N100 IXTN 21N100
Fig. 1 Output Characteristics
40
TJ = 25C
Fig. 2 Input Admittance
40
VGS = 10V
35 30
35 30
ID - Amperes
ID - Amperes
6V
25 20 15 10 5 0
5V
25 20 15 10 5 0
TJ = 25C
0
5
10
15
20
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.5
TJ = 25C
Fig. 4 Temperature Dependence of Drain to Source Resistance
2.50 2.25
1.4
RDS(on) - Normalized
RDS(on) - Normalized
2.00 1.75 1.50 1.25 1.00 0.75
ID = 12A
1.3 1.2 1.1 1.0 0.9 0 5 10 15 20 25 30 35 40 45 50
VGS = 10V
VGS = 15V
0.50 -50
-25
0
25
50
75
100 125 150
ID - Amperes
TJ - Degrees C
Fig. 5 Drain Current vs. Case Temperature
25 20
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.2
VGS(th)
1.1
BVDSS
BV/VG(th) - Normalized
-25 0 25 50 75 100 125 150
ID - Amperes
1.0 0.9 0.8 0.7 0.6
15 10 5 0 -50
0.5 -50
-25
0
25
50
75
100 125 150
TC - Degrees C
TJ - Degrees C
(c) 2000 IXYS All rights reserved
3-4
IXTK 21N100 IXTN 21N100
Fig.7 Gate Charge Characteristic Curve
10 9 8 7
VDS = 500V ID = 12A IG = 10mA
Fig.8 Capacitance Curves
9000 8000
Ciss
Capacitance - pF
7000 6000 5000 4000 3000 2000 1000 0
Coss Crss f = 1 MHz VDS = 25V
VGS - Volts
6 5 4 3 2 1 0 0 50 100 150 200 250 300
0
5
10
15
20
Gate Charge - nCoulombs
VDS - Volts
Fig.9 Source Current vs. Source to Drain Voltage
40 35 30
ID - Amperes
25 20
TJ = 125C
15
TJ = 25C
10 5 0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD - Volts
Fig.10 Transient Thermal Impedance
1
R(th)JC - K/W
D=0.5
0.1
D=0.2 D=0.1 D=0.05
0.01 D=0.02
D=0.01 Single pulse
D = Duty Cycle
0.001 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2000 IXYS All rights reserved
4-4

▲Up To Search▲

Price & Availability of IXTN21N100

	To Download IXTN21N100 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .